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| SSM5G10TU Silicon P Channel MOS Type (U-MOS)/Silicon Epitaxial Schottky Barrier Diode SSM5G10TU DC-DC Converter Applications * * * 1.8-V drive Combines a P-channel MOSFET and a Schottky barrier diode in one package. Low RDS(ON) and Low VF Unit: mm Absolute Maximum Ratings MOSFET (Ta = 25C) Characteristics Drain-Source voltage Gate-Source voltage Drain current DC Pulse Symbol VDS VGSS ID IDP (Note 2) PD (Note 1) t = 10 s Tch Rating -20 8 -1.5 -3.0 0.5 0.8 150 Unit V V A Drain power dissipation Channel temperature W C UFV JEDEC 2-2R1A Schottky Barrier Diode (Ta = 25C) Characteristics Repetitive peak reverse voltage Average forward current Peak one cycle surge forward current Junction temperature Symbol VRRM IF(AV) IFSM Tj Rating 20 0.7 2 (50 Hz) 125 Unit V A A C JEITA TOSHIBA Weight: 7 mg (typ.) MOSFET and Diode (Ta = 25C) Characteristics Storage temperature range Symbol Tstg Rating -55 to 125 Unit C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Note 1: Mounted on FR4 board (25.4 mm x 25.4 mm x 1.6 mm, Cu pad: 645 mm2 Marking 5 4 Equivalent Circuit (top view) 5 4 KET 1 2 3 1 2 3 1 2008-09-27 SSM5G10TU MOSFET Electrical Characteristics (Ta = 25C) Characteristics Drain-source breakdown voltage Drain cutoff current Gate leakage current Gate threshold voltage Forward transfer admittance Symbol Test Conditions Min -20 -12 -0.3 (Note 2) (Note 2) (Note 2) (Note 2) 1.6 VDS = -10 V, VGS = 0 V, f = 1 MHz VDS = -10 V, ID= -1.5 A VGS = -4 V VDD = -10 V, ID = -1 A, VGS = 0 to -2.5 V, RG = 4.7 ID = 1.5 A, VGS = 0 V (Note 2) Typ. 3.2 160 210 280 250 43 35 6.4 4.5 1.9 12 11.2 0.88 Max -10 1 -1.0 213 294 430 1.2 ns V nC pF m Unit V A A V S V (BR) DSS ID = -1 mA, VGS = 0 V V (BR) DSX ID = -1 mA, VGS = +8 V IDSS IGSS Vth Yfs VDS = -20 V, VGS = 0 V VGS = 8 V, VDS = 0 V VDS = -3 V, ID = -1 mA VDS = -3 V, ID = -1 A ID = -1.0 A, VGS = -4 V Drain-source ON-resistance RDS (ON) ID = -0.8 A, VGS = -2.5 V ID = -0.1 A, VGS = -1.8 V Input capacitance Output capacitance Reverse transfer capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Switching time Turn-on time Turn-off time Ciss Coss Crss Qg Qgs Qgd ton toff VDSF Drain-source forward voltage Note 2: Pulse test Switching Time Test Circuit (a) Test Circuit 0 OUT IN -2.5 V RG RL VDD 90% (b) VIN 0V 10% -2.5V 10 s (c) VOUT VDS (ON) 90% 10% tr ton toff tf VDD = - 10 V RG = 4.7 D.U. 1% VIN: tr, tf < 5 ns Common Source Ta = 25C VDD Precaution Vth can be expressed as voltage between gate and source when the low operating current value is ID = -1 mA for this product. For normal switching operation, VGS (on) requires a higher voltage than Vth and VGS (off) requires a lower voltage than Vth. (The relationship can be established as follows: VGS (off) < Vth < VGS (on)) Be sure to take this into consideration when using the device. 2 2008-09-27 SSM5G10TU Schottky Barrier Diode Electrical Characteristics (Ta = 25C) Characteristics Peak forward voltage Peak forward voltage Repetitive peak reverse current Junction capacitance Symbol VFM (1) VFM (2) IRRM CT IF = 0.5 A IF = 0.7 A VR = 6 V VR = 0 V, f = 1 MHz Test Condition Min Typ. 0.32 0.36 25 143 Max 0.39 0.43 150 Unit V V A pF Precaution The Schottky barrier diode in this device has large reverse current leakage compared to typical switching diodes. Thus, excessive operating temperature or voltage may cause thermal runaway. To avoid this problem, be sure to take both forward and reverse loss into consideration. Handling Precaution When handling individual devices that are not yet mounted on a circuit board, make sure that the environment is protected against electrostatic discharge. Operators should wear antistatic clothing, and containers and other objects that come into direct contact with devices should be made of antistatic materials. The Channel-to-Ambient thermal resistance Rth (ch-a) and the drain power dissipation PD vary according to the board material, board area, board thickness and pad area. When using this device, be sure to take heat dissipation fully into account. 3 2008-09-27 SSM5G10TU MOSFET ID - VDS -3 -8.0 V -4.0 V -2.5 V -10 Common Source VDS = -3 V ID - VGS (A) ID -2 (A) -1 ID Drain current -1.8 V -0.1 Ta = 100 C Drain current -1 -1.5 V -0.01 - 25 C -0.001 25 C VGS =- 1.2 V 0 Common Source Ta = 25 C -0.8 -1.0 0 -0.2 -0.4 -0.6 -0.0001 0 -1.0 -2.0 -3.0 Drain-source voltage VDS (V) Gate-source voltage VGS (V) RDS (ON) - VGS 1000 ID =-1.0A Common Source 800 1000 RDS (ON) - ID Common Source Ta = 25C Drain-source ON-resistance RDS (ON) (m) Drain-source ON-resistance RDS (ON) (m) 800 600 600 400 25 C Ta = 100 C - 25 C 400 -1.8 V 200 -2.5 V VGS = -4.0 V 0 0 -1 -2 -3 200 0 0 -2.0 -4.0 -6.0 -8.0 Gate-source voltage VGS (V) Drain current ID (A) RDS (ON) - Ta 1000 -1.0 Vth - Ta Common Source Vth (V) Common Source VDS = -3.0 V ID = -1 mA Drain-source ON-resistance RDS (ON) (m) 800 600 Gate threshold voltage -0.5 400 -0.8 A / -2.5 V ID = -0.1 A / VGS = -1.8 V 200 -1.0 A / -4.0 V 0 -50 0 50 100 150 0 -50 0 50 100 150 Ambient temperature Ta (C) Ambient temperature Ta (C) 4 2008-09-27 SSM5G10TU MOSFET IDR - VDS 10 Common Source VGS = 0 V D 1 G IDR (S) 10 Common Source Ta = 25C 3 VDS = -3.0 V |Yfs| - ID (A) Drain reverse current IDR Forward transfer admittance Yfs S 0.1 Ta =100 C 25 C 1 0.3 0.01 -25 C 0.1 -0.01 -0.1 -1 -10 0.001 0 0.5 1.0 1.5 Drain current ID (A) Drain-source voltage VDS (V) C - VDS 1000 500 1000 t - ID Common Source VDD = -10 V VGS = 0 to -2.5 V Ta = 25 C RG = 4.7 (ns) 300 Ciss (pF) toff 100 tf 100 50 30 Coss Crss C Capacitance Switching time t 10 5 3 Common Source Ta = 25C f = 1 MHz VGS = 0 V -1 -10 -100 10 ton tr 1 -0.1 1 -0.01 -0.1 -1 -10 Drain-source voltage VDS (V) Drain current ID (A) Dynamic Input Characteristic -10 Common Source (V) -8 ID = -1.5 A Ta = 25C VGS Gate-Source voltage -6 VDD = -10 V -4 VDD = -16 V -2 0 0 10 20 Total Gate Charge Qg (nC) 5 2008-09-27 SSM5G10TU Schottky Barrier Diode IF - V F 1000 0.4 PF(AV) - IF(AV) (mA) Average forward power dissipation PF (AV) (W) IF DC 0.3 60 0.2 = 30 90 120 180 100 Instantaneous forward current 10 Rectangular waveform 0.1 0 360 Conduction angle 0 1 0.1 0 0.1 0.2 0.3 0.4 0.5 0 0.2 0.4 0.6 0.8 1.0 1.2 Instantaneous forward voltage VF (V) Average forward current IF (AV) (A) Ta max - IF (AV) 140 CT - VR 1000 (typical) f = 1 MHz Ta = 25C Maximum allowable temperature Ta max (C) 120 100 80 DC 60 40 20 0 0 (pF) Capacitance 0.8 1.0 1.2 1.4 CT 0.2 0.4 0.6 100 10 1 0.1 1 10 100 Average forward current IF (AV) (A) Reverse voltage VR (V) 6 2008-09-27 SSM5G10TU Schottky Diode IR - V R 1000 100 Pulse test 30 15 10 IR - Tj (typical) (mA) IR 100 (A) 10 5 1 Reverse current IR 25 C 10 Reverse current 0.1 VR = 3 V 1 0 0.01 5 10 15 20 25 0 50 100 150 Reverse voltage VR (V) Junction temperature Tj (C) PR (AV) - VR 1.6 Rectangular waveform 0 1.2 VR 240 180 360 (typical) Average reverse power dissipation PR (AV) (W) DC 300 0.8 Conduction angle Tj = 125C 0.4 120 = 60 0 0 5 10 15 20 Reverse voltage VR (V) 7 2008-09-27 SSM5G10TU RESTRICTIONS ON PRODUCT USE * Toshiba Corporation, and its subsidiaries and affiliates (collectively "TOSHIBA"), reserve the right to make changes to the information in this document, and related hardware, software and systems (collectively "Product") without notice. * This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with TOSHIBA's written permission, reproduction is permissible only if reproduction is without alteration/omission. * Though TOSHIBA works continually to improve Product's quality and reliability, Product can malfunction or fail. Customers are responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily injury or damage to property, including data loss or corruption. Before creating and producing designs and using, customers must also refer to and comply with (a) the latest versions of all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes for Product and the precautions and conditions set forth in the "TOSHIBA Semiconductor Reliability Handbook" and (b) the instructions for the application that Product will be used with or for. Customers are solely responsible for all aspects of their own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS' PRODUCT DESIGN OR APPLICATIONS. * Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document. Product is neither intended nor warranted for use in equipment or systems that require extraordinarily high levels of quality and/or reliability and/or a malfunction or failure of which may cause loss of human life, bodily injury, serious property damage or serious public impact ("Unintended Use"). Unintended Use includes, without limitation, equipment used in nuclear facilities, equipment used in the aerospace industry, medical equipment, equipment used for automobiles, trains, ships and other transportation, traffic signaling equipment, equipment used to control combustions or explosions, safety devices, elevators and escalators, devices related to electric power, and equipment used in finance-related fields. Do not use Product for Unintended Use unless specifically permitted in this document. * Do not disassemble, analyze, reverse-engineer, alter, modify, translate or copy Product, whether in whole or in part. * Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. * The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. * ABSENT A WRITTEN SIGNED AGREEMENT, EXCEPT AS PROVIDED IN THE RELEVANT TERMS AND CONDITIONS OF SALE FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY WHATSOEVER, INCLUDING WITHOUT LIMITATION, INDIRECT, CONSEQUENTIAL, SPECIAL, OR INCIDENTAL DAMAGES OR LOSS, INCLUDING WITHOUT LIMITATION, LOSS OF PROFITS, LOSS OF OPPORTUNITIES, BUSINESS INTERRUPTION AND LOSS OF DATA, AND (2) DISCLAIMS ANY AND ALL EXPRESS OR IMPLIED WARRANTIES AND CONDITIONS RELATED TO SALE, USE OF PRODUCT, OR INFORMATION, INCLUDING WARRANTIES OR CONDITIONS OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE, ACCURACY OF INFORMATION, OR NONINFRINGEMENT. * Do not use or otherwise make available Product or related software or technology for any military purposes, including without limitation, for the design, development, use, stockpiling or manufacturing of nuclear, chemical, or biological weapons or missile technology products (mass destruction weapons). Product and related software and technology may be controlled under the Japanese Foreign Exchange and Foreign Trade Law and the U.S. Export Administration Regulations. Export and re-export of Product or related software or technology are strictly prohibited except in compliance with all applicable export laws and regulations. * Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. Please use Product in compliance with all applicable laws and regulations that regulate the inclusion or use of controlled substances, including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of noncompliance with applicable laws and regulations. 8 2008-09-27 |
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